Base Part Number:
PBLS20
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 20V 100mA, 3A 100MHz 1.5W Surface Mount 8-SO
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 5mA, 5V / 150 @ 2A, 2V
Transistor Type:
1 NPN Pre-Biased, 1 PNP
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Resistor - Base (R1):
10kOhms
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
Supplier Device Package:
8-SO
Voltage - Collector Emitter Breakdown (Max):
50V, 20V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
10kOhms
Power - Max:
1.5W
Customer Reference:
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Current - Collector (Ic) (Max):
100mA, 3A
Current - Collector Cutoff (Max):
1µA, 100nA
Manufacturer:
NXP USA Inc.
This is manufactured by NXP USA Inc.. The manufacturer part number is PBLS2003S,115. Base Part Number: pbls20. It features pre-biased bipolar transistor (bjt) 1 npn pre-biased, 1 pnp 50v, 20v 100ma, 3a 100mhz 1.5w surface mount 8-so. Furthermore, 30 @ 5ma, 5v / 150 @ 2a, 2v is the minimum DC current gain at given voltage. The transistor is a 1 npn pre-biased, 1 pnp type. The transition frequency of the product is 100mhz. The product is available in surface mount configuration. Resistor - Base - 10kohms. The 150mv @ 500µa, 10ma / 355mv @ 300ma, 3a is the maximum Vce saturation. 8-so is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v, 20v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 10kohms. The maximum power of the product is 1.5w. Moreover, the product comes in 8-soic (0.154", 3.90mm width). The maximum collector current includes 100ma, 3a. In addition, 1µa, 100na is the maximum current at collector cutoff. The nxp usa inc.'s product offers user-desired applications.
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