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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2706JE(TE85L,F). Resistor - Base - 4.7kohms. The maximum collector current includes 100ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. Resistor - Emittor Base (R2) - 47kohms. Moreover, the product comes in sot-553. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 200mhz. The 300mv @ 250µa, 5ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50v. The transistor is a 2 pnp - pre-biased (dual) (emitter coupled) type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 16 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. esv is the supplier device package value. The maximum power of the product is 100mw. Moreover, it corresponds to rn2706, a base product number of the product. The product is designated with the ear99 code number.
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