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Showing Results For: JFETs
JFETs (Junction Field Effect Transistors) are four-terminal devices in which the current between two electrodes is controlled by the action of an electric field across a reverse-biased PN junction. Their terminals are referred to as Gate, Drain, Source, and Body, where the body connects to the source. The integrated semiconductor materials in JFETs are positively and negatively doped and configured to form channels for efficient device operation. They are used as electronically controlled switches, amplifiers, and voltage-controlled resistors.
Doping is the electrical property alteration process of intrinsic semiconductors by adding foreign impurities. The intrinsic semiconductors become P-Type semiconductors by doping with trivalent atoms used to dope silicon. On the other hand, pentavalent atoms designed to dope silicone convert an intrinsic semiconductor into an N-Type semiconductor.
A JFET is mainly classified into two types, N-Channel and P-Channel JFET construction.
These semiconductor devices offer various benefits with excellent attributes, such as:
They feature a fundamental difference in their charge carrier flow kinetics. The JFET offers a majority charge carrier flow only, whereas the BJT features majority as well as minority charge carrier flow.
JFET transistors are found in a vast array of electronic and communication applications. They act as electronically controlled switches to regulate the power supply to a load. They are also used as: