Category:
Power MOSFET
Dimensions:
16.03 x 5.16 x 21.1mm
Maximum Continuous Drain Current:
21 A
Transistor Material:
Si
Width:
5.16mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
560 V
Maximum Gate Threshold Voltage:
3.9V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
95 nC
Channel Type:
N
Typical Input Capacitance @ Vds:
2400 pF@ 25 V
Length:
16.03mm
Pin Count:
3
Forward Transconductance:
18S
Typical Turn-Off Delay Time:
67 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
208 W
Series:
CoolMOS C3
Maximum Gate Source Voltage:
±30 V
Height:
21.1mm
Typical Turn-On Delay Time:
10 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
190 mΩ
This is N-channel MOSFET 21 A 560 V CoolMOS C3 3-Pin TO-247 manufactured by Infineon. The manufacturer part number is SPW21N50C3. It is of power mosfet category . The given dimensions of the product include 16.03 x 5.16 x 21.1mm. While 21 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.16mm wide. The product offers single transistor configuration. It has a maximum of 560 v drain source voltage. The product carries 3.9v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 95 nc. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 2400 pf@ 25 v . Its accurate length is 16.03mm. It contains 3 pins. The forward transconductance is 18s . Whereas, its typical turn-off delay time is about 67 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 208 w maximum power dissipation. The product coolmos c3, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 21.1mm. In addition, it has a typical 10 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 190 mω maximum drain source resistance.
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