Infineon IRLML2502GTRPBF N-channel MOSFET, 4.2 A, 20 V HEXFET, 3-Pin SOT-23
Product Information
Category:
Power MOSFET
Dimensions:
3.04 x 2.64 x 1.02mm
Maximum Continuous Drain Current:
4.2 A
Transistor Material:
Si
Width:
2.64mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Drain Source Resistance:
80 mΩ
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
12 nC @ 5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
740 pF @ 15 V
Length:
3.04mm
Pin Count:
3
Forward Transconductance:
5.8S
Typical Turn-Off Delay Time:
54 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.25 W
Series:
HEXFET
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1.02mm
Typical Turn-On Delay Time:
7.5 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
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This is N-channel MOSFET 4.2 A 20 V HEXFET 3-Pin SOT-23 manufactured by Infineon. The manufacturer part number is IRLML2502GTRPBF. It is of power mosfet category . The given dimensions of the product include 3.04 x 2.64 x 1.02mm. While 4.2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2.64mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. It provides up to 80 mω maximum drain source resistance. The package is a sort of sot-23. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 12 nc @ 5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 740 pf @ 15 v . Its accurate length is 3.04mm. It contains 3 pins. The forward transconductance is 5.8s . Whereas, its typical turn-off delay time is about 54 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.25 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 1.02mm. In addition, it has a typical 7.5 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v .
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