Category:
Power MOSFET
Dimensions:
4.85 x 3.95 x 0.74mm
Maximum Continuous Drain Current:
24 A
Transistor Material:
Si
Width:
3.95mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
5V
Package Type:
DirectFET SB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
10 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
910 pF @ 25 V
Length:
4.85mm
Pin Count:
7
Typical Turn-Off Delay Time:
7.9 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
41 W
Series:
DirectFET, HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
0.74mm
Typical Turn-On Delay Time:
5.5 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
31 mΩ
This is N-channel MOSFET 24 A 100 V DirectFET HEXFET 7-Pin DirectFET SB manufactured by Infineon. The manufacturer part number is AUIRF7647S2TR1. It is of power mosfet category . The given dimensions of the product include 4.85 x 3.95 x 0.74mm. While 24 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.95mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of directfet sb. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 10 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 910 pf @ 25 v . Its accurate length is 4.85mm. It contains 7 pins. Whereas, its typical turn-off delay time is about 7.9 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 41 w maximum power dissipation. The product directfet, hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 0.74mm. In addition, it has a typical 5.5 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 31 mω maximum drain source resistance.
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