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Manufacturer : Broadcom
Manufacturer Part No : ATF-53189-BLK
Enrgtech Part No : ET10001571
Product Range : PolySwitch RXEF Series

Broadcom ATF-53189-BLK, RF Amplifier Linear Amplifier, Low Noise, Power Amplifier, 17.2 dB 6 GHz, 3-Pin SOT-89

GaAs FET RF Transistors, Avago Technologies GaAs FET RF transistors are ideal for the first or second stage of base station Low Noise Amplifiers (LNA). The specifications exhibit an excellent combination of low noise figure and enhanced linearity. These GaAs MESFET RF transistors from Avago Technologies are designed for use in wireless and high frequency applications. MESFET Transistors, Avago Technologies Metal-semiconductor field-effect transistors (MESFETs) offer better high-frequency performance than their JFET and MOSFET counterparts. They are frequently used in low-noise front-end RF amplifiers and microwave receivers.

Product Information

Dimensions : 4.6 x 2.6 x 1.6mm
Mounting Type : Surface Mount
Typical Output Power : 23dBm
Number of Channels per Chip : 1
Maximum Operating Frequency : 6 GHz
Height : 1.6mm
Width : 2.6mm
Length : 4.6mm
Package Type : SOT-89
Typical Power Gain : 17.2 dB
Amplifier Type : Linear Amplifier, Low Noise, Power Amplifier
Typical Noise Figure : 0.85dB
Maximum Operating Temperature : +150 °C
Pin Count : 3
rohs : RoHS Certificate of Compliance

Technical Documents

  • ATF-53189 Enhancement Mode[1] Pseudomorphic HEMT in SOT 89 Package (Technical Reference)
  • ESD Control Selection Guide V1 (Technical Reference)

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