NXP BFT46,215 N-channel JFET Transistor, 25 V, Idss 0.2 → 1.5mA, 3-Pin SOT-23

BFT46-215 NXP BFT46,215 N-channel JFET Transistor, 25 V, Idss 0.2 → 1.5mA, 3-Pin SOT-23
BFT46,215
BFT46,215
ET16899834
ET16899834
Unclassified
NXP

Product Information

Maximum Drain Source Voltage:
25 V
Configuration:
Single
Dimensions:
3 x 1.4 x 1mm
Mounting Type:
Surface Mount
Maximum Gate Source Voltage:
-25 V
Idss Drain-Source Cut-off Current:
0.2 → 1.5mA
Height:
1mm
Width:
1.4mm
Length:
3mm
Package Type:
SOT-23 (TO-236AB)
Maximum Drain Gate Voltage:
25V
Minimum Operating Temperature:
-65 °C
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is N-channel JFET Transistor 25 V Idss 0.2 → 1.5mA 3-Pin SOT-23 manufactured by NXP. The manufacturer part number is BFT46,215. It has a maximum of 25 v drain source voltage. The product is available in single configuration. The given dimensions of the product include 3 x 1.4 x 1mm. The product is available in surface mount configuration. It features a maximum gate source voltage of -25 v. Moreover, it has 0.2 → 1.5ma Idss drain source cut-off current . In addition, the height is 1mm. Furthermore, the product is 1.4mm wide. Its accurate length is 3mm. The package is a sort of sot-23 (to-236ab). It has a maximum 25v drain gate voltage . Whereas, the minimum operating temperature of the product is -65 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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BFT46 N-channel silicon FET Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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You will get a confirmation email regarding your order of NXP BFT46,215 N-channel JFET Transistor, 25 V, Idss 0.2 → 1.5mA, 3-Pin SOT-23. You can also check on our website or by contacting our customer support team for further order details on NXP BFT46,215 N-channel JFET Transistor, 25 V, Idss 0.2 → 1.5mA, 3-Pin SOT-23.
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