ON Semiconductor FDS9958_F085 Dual P-channel MOSFET, 2.9 A, 60 V PowerTrench, 8-Pin SOIC

FDS9958-F085 ON Semiconductor FDS9958_F085 Dual P-channel MOSFET, 2.9 A, 60 V PowerTrench, 8-Pin SOIC
FDS9958-F085
FDS9958-F085
ET16727201
ET16727201
Unclassified
Unclassified
ON Semiconductor

Product Information

Category:
Power MOSFET
Dimensions:
4.9 x 3.9 x 1.575mm
Maximum Continuous Drain Current:
2.9 A
Transistor Material:
Si
Width:
3.9mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
60 V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
16 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
765 pF @ -30 V
Length:
4.9mm
Pin Count:
8
Typical Turn-Off Delay Time:
27 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.575mm
Typical Turn-On Delay Time:
6 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
190 mΩ
RoHs Compliant
Checking for live stock

This is FDS9958_F085 Dual P-channel MOSFET 2.9 A 60 V PowerTrench 8-Pin SOIC manufactured by ON Semiconductor. The manufacturer part number is FDS9958-F085. It is of power mosfet category . The given dimensions of the product include 4.9 x 3.9 x 1.575mm. While 2.9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.9mm wide. The product offers isolated transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of soic. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 16 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 765 pf @ -30 v . Its accurate length is 4.9mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 27 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.575mm. In addition, it has a typical 6 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 190 mω maximum drain source resistance.

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FDS9958_F085, Dual P-Channel PowerTrench MOSFET -60V, -2.9A, 105mOhm(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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You will get a confirmation email regarding your order of ON Semiconductor FDS9958_F085 Dual P-channel MOSFET, 2.9 A, 60 V PowerTrench, 8-Pin SOIC. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor FDS9958_F085 Dual P-channel MOSFET, 2.9 A, 60 V PowerTrench, 8-Pin SOIC.
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