Category:
Power MOSFET
Dimensions:
3.15 x 3.15 x 1.12mm
Maximum Continuous Drain Current:
19 A
Transistor Material:
Si
Width:
3.15mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Drain Source Resistance:
7.5 mΩ
Package Type:
PowePAK 1212
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
23 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1300 pF @ 15 V
Length:
3.15mm
Pin Count:
8
Typical Turn-Off Delay Time:
19 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
52 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.12mm
Typical Turn-On Delay Time:
16 ns
Minimum Operating Temperature:
-55 °C
