Category:
Power MOSFET
Dimensions:
10.1 x 4.7 x 9.4mm
Maximum Continuous Drain Current:
11.5 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
31 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
920 pF @ 25 V
Length:
10.1mm
Pin Count:
3
Typical Turn-Off Delay Time:
40 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
120 W
Series:
QFET
Maximum Gate Source Voltage:
±30 V
Height:
9.4mm
Typical Turn-On Delay Time:
20 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
470 mΩ
