Category:
Power MOSFET
Dimensions:
10.16 x 4.7 x 15.87mm
Maximum Continuous Drain Current:
1.8 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Package Type:
TO-220F
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6.2 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
210 pF@ 25 V
Length:
10.16mm
Pin Count:
3
Typical Turn-Off Delay Time:
26 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
27 W
Series:
UniFET
Maximum Gate Source Voltage:
±25 V
Height:
15.87mm
Typical Turn-On Delay Time:
10 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
2.5 Ω
HTSUS:
8541.29.0095
Package:
Bulk
Series:
*
ECCN:
EAR99
