Category:
Power MOSFET
Dimensions:
3.4 x 3.4 x 1mm
Maximum Continuous Drain Current:
80 A
Transistor Material:
Si
Width:
3.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
12 V
Maximum Drain Source Resistance:
6.4 mΩ
Package Type:
Power 33
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
71 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
890 pF@ -6 V
Length:
3.4mm
Pin Count:
8
Typical Turn-Off Delay Time:
193 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
48 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1mm
Typical Turn-On Delay Time:
24 ns
Minimum Operating Temperature:
-55 °C
