Category:
Power MOSFET
Dimensions:
3 x 1.7 x 1mm
Maximum Continuous Drain Current:
2.2 A, 3 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Package Type:
SSOT
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3.3 nC @ 4.5 V, 3.7 nC @ 4.5 V
Channel Type:
N, P
Typical Input Capacitance @ Vds:
324 (Q1) pF @ 10 V, 337 (Q2) pF @ -10 V
Length:
3mm
Pin Count:
6
Forward Transconductance:
6S
Typical Turn-Off Delay Time:
10 (Q2) ns, 13 (Q1) ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.96 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±12 V
Height:
1mm
Typical Turn-On Delay Time:
5 (Q1) ns, 9 (Q2) ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
106 mΩ, 190 mΩ
