Dimensions:
8 x 8 x 1.05mm
Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Width:
8mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
Power 88
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
57 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2043 pF @ 380 V
Length:
8mm
Pin Count:
4
Typical Turn-Off Delay Time:
64 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
208 W
Series:
SuperFET II
Maximum Gate Source Voltage:
±20 (DC) V, ±30 (AC) V
Height:
1.05mm
Typical Turn-On Delay Time:
20 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
199 mΩ
