Toshiba SSM3J114TU(TE85L) P-channel MOSFET, 1.8 A, 20 V SSM3, 3-Pin UFM

SSM3J114TU-TE85L- Toshiba SSM3J114TU(TE85L) P-channel MOSFET, 1.8 A, 20 V SSM3, 3-Pin UFM
Toshiba

Product Information

Dimensions:
2 x 1.7 x 0.7mm
Maximum Continuous Drain Current:
1.8 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1V
Package Type:
UFM
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
7.7 nC @ 4 V
Channel Type:
P
Typical Input Capacitance @ Vds:
331 pF@ 10 V
Length:
2.1mm
Pin Count:
3
Typical Turn-Off Delay Time:
18 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.8 W
Series:
SSM3
Maximum Gate Source Voltage:
±8 V
Height:
0.7mm
Typical Turn-On Delay Time:
19 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
526 mΩ
RoHs Compliant
Checking for live stock

This is P-channel MOSFET 1.8 A 20 V SSM3 3-Pin UFM manufactured by Toshiba. The manufacturer part number is SSM3J114TU(TE85L). The given dimensions of the product include 2 x 1.7 x 0.7mm. While 1.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.7mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of ufm. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 7.7 nc @ 4 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 331 pf@ 10 v . Its accurate length is 2.1mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 18 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 0.8 w maximum power dissipation. The product ssm3, is a highly preferred choice for users. It features a maximum gate source voltage of ±8 v. In addition, the height is 0.7mm. In addition, it has a typical 19 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 526 mω maximum drain source resistance.

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Datasheet(Technical Reference)

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