Category:
Power MOSFET
Dimensions:
6.6 x 6.1 x 2.3mm
Maximum Continuous Drain Current:
15 A
Transistor Material:
Si
Width:
6.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Package Type:
DPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
20 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
830 pF@ 25 V
Length:
6.6mm
Pin Count:
3
Typical Turn-Off Delay Time:
38 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Series:
QFET
Maximum Gate Source Voltage:
±30 V
Height:
2.3mm
Typical Turn-On Delay Time:
16 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
140 mΩ
