Category:
Power MOSFET
Dimensions:
15.8 x 5 x 18.9mm
Maximum Continuous Drain Current:
170 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
TO-3PN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
220 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
7200 pF@ 25 V
Length:
15.8mm
Pin Count:
3
Typical Turn-Off Delay Time:
260 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
375 W
Series:
QFET
Maximum Gate Source Voltage:
±25 V
Height:
18.9mm
Typical Turn-On Delay Time:
85 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
6 mΩ
