Category:
Power MOSFET
Dimensions:
15.8 x 5 x 20.1mm
Maximum Continuous Drain Current:
70 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Package Type:
TO-3PN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
66 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3050 pF@ 25 V
Length:
15.8mm
Pin Count:
3
Typical Turn-Off Delay Time:
65 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
417 W
Series:
UniFET
Maximum Gate Source Voltage:
±30 V
Height:
20.1mm
Typical Turn-On Delay Time:
71 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
35 mΩ
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Gate Charge (Qg) (Max) @ Vgs:
86 nC @ 10 V
Rds On (Max) @ Id, Vgs:
35mOhm @ 35A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±30V
Power Dissipation (Max):
417W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3970 pF @ 25 V
Mounting Type:
Through Hole
Series:
UniFET™
Supplier Device Package:
TO-3PN
Current - Continuous Drain (Id) @ 25°C:
70A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
