Dimensions:
16.2 x 5 x 20.1mm
Maximum Continuous Drain Current:
16.5 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Package Type:
TO-3PN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
32 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1495 pF @ 25 V
Length:
16.2mm
Pin Count:
3
Typical Turn-Off Delay Time:
65 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
205 W
Series:
UniFET
Maximum Gate Source Voltage:
±30 V
Height:
20.1mm
Typical Turn-On Delay Time:
40 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
380 mΩ
