Category:
Power MOSFET
Dimensions:
2.9 x 2.4 x 0.83mm
Maximum Continuous Drain Current:
10 A
Transistor Material:
Si
Width:
2.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
33 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
WMini8-F1
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5.1 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
520 pF@ 10 V
Length:
2.9mm
Pin Count:
8
Typical Turn-Off Delay Time:
32 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.5 W
Series:
FK
Maximum Gate Source Voltage:
±20 V
Height:
0.83mm
Typical Turn-On Delay Time:
8 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
25 mΩ
