Vishay SIS890DN-T1-GE3 N-channel MOSFET, 30 A, 100 V ThunderFET, 8-Pin PowerPAK 1212

Vishay

Product Information

Dimensions:
3.4 x 3.4 x 1.12mm
Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Width:
3.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Package Type:
PowerPAK 1212
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
19.1 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
802 pF @ 50 V
Length:
3.4mm
Pin Count:
8
Typical Turn-Off Delay Time:
16 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
52 W
Series:
ThunderFET
Maximum Gate Source Voltage:
±20 V
Height:
1.12mm
Typical Turn-On Delay Time:
10 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
31.5 mΩ
RoHs Compliant
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This is N-channel MOSFET 30 A 100 V ThunderFET 8-Pin PowerPAK 1212 manufactured by Vishay. The manufacturer part number is SIS890DN-T1-GE3. The given dimensions of the product include 3.4 x 3.4 x 1.12mm. While 30 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.4mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The package is a sort of powerpak 1212. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 19.1 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 802 pf @ 50 v . Its accurate length is 3.4mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 16 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 52 w maximum power dissipation. The product thunderfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.12mm. In addition, it has a typical 10 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 31.5 mω maximum drain source resistance.

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SiS890DN, N-Channel 100V (Drain-Source) MOSFET Data Sheet(Technical Reference)

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