Category:
Power MOSFET
Dimensions:
3.15 x 3.15 x 0.8mm
Maximum Continuous Drain Current:
22 A
Transistor Material:
Si
Width:
3.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Package Type:
PowerPAK 1212
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
98 nC @ 8 V
Board Level Components:
Y
Channel Type:
P
Typical Input Capacitance @ Vds:
5700 pF @ -10V
Length:
3.4mm
Pin Count:
8
Typical Turn-Off Delay Time:
110 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
39 W
Maximum Gate Source Voltage:
±8 V
Height:
0.8mm
Typical Turn-On Delay Time:
40 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
14 mΩ
