Dimensions:
3.35 x 3.35 x 0.8mm
Maximum Continuous Drain Current:
45 A
Transistor Material:
Si
Width:
3.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
3V
Package Type:
POWERDI3333
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
55.4 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2577 pF @ 30 V
Length:
3.35mm
Pin Count:
8
Typical Turn-Off Delay Time:
27.6 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.1 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.8mm
Typical Turn-On Delay Time:
6.2 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
18 mΩ
This is Diodes Inc N-channel MOSFET 45 A 60 V 8-Pin POWERDI3333 manufactured by DiodesZetex. The manufacturer part number is DMN6013LFG-7. The given dimensions of the product include 3.35 x 3.35 x 0.8mm. While 45 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.35mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 3v of maximum gate threshold voltage. The package is a sort of powerdi3333. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 55.4 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 2577 pf @ 30 v . Its accurate length is 3.35mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 27.6 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.1 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.8mm. In addition, it has a typical 6.2 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 18 mω maximum drain source resistance.
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