Dimensions:
1.65 x 1.65 x 0.48mm
Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Width:
1.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
0.9V
Package Type:
X1-DFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
21.5 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1788 pF @ 10 V
Length:
1.65mm
Pin Count:
6
Typical Turn-Off Delay Time:
33 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Maximum Gate Source Voltage:
±10 V
Height:
0.48mm
Typical Turn-On Delay Time:
3.8 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
26 mΩ
