Category:
Power MOSFET
Dimensions:
5.1 x 3.4 x 0.75mm
Maximum Continuous Drain Current:
21 A
Transistor Material:
Si
Width:
3.4mm
Transistor Configuration:
Common Source
Maximum Drain Source Voltage:
100 V
Package Type:
PQFN
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
11 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
734 pF @ 50 V
Length:
5.1mm
Pin Count:
8
Typical Turn-Off Delay Time:
14 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
23 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±20 V
Height:
0.75mm
Typical Turn-On Delay Time:
8.4 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
38 mΩ
