Category:
Power MOSFET
Dimensions:
2 x 1.25 x 1mm
Maximum Continuous Drain Current:
220 mA
Transistor Material:
Si
Width:
1.25mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
25 V
Package Type:
SC-70
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.65V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.29 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
9.5 pF @ 10 V
Length:
2mm
Pin Count:
6
Typical Turn-Off Delay Time:
4 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.3 W
Maximum Gate Source Voltage:
8 V
Height:
1mm
Typical Turn-On Delay Time:
5 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
7 Ω
This is Fairchild Dual N-channel MOSFET 220 mA 25 V 6-Pin SC-70 manufactured by Fairchild Semiconductor. The manufacturer part number is FDG6301N_F085. It is of power mosfet category . The given dimensions of the product include 2 x 1.25 x 1mm. While 220 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.25mm wide. The product offers isolated transistor configuration. It has a maximum of 25 v drain source voltage. The package is a sort of sc-70. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 0.65v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 0.29 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 9.5 pf @ 10 v . Its accurate length is 2mm. It contains 6 pins. Whereas, its typical turn-off delay time is about 4 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 0.3 w maximum power dissipation. It features a maximum gate source voltage of 8 v. In addition, the height is 1mm. In addition, it has a typical 5 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 7 ω maximum drain source resistance.
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