Fairchild FDD5N50TM_WS N-channel MOSFET, 4 A, 500 V UniFET, 3-Pin DPAK

FDD5N50TM_WS Fairchild  N-channel MOSFET, 4 A, 500 V UniFET, 3-Pin DPAK
FDD5N50TM_WS
Fairchild Semiconductor

Product Information

Dimensions:
6.73 x 6.22 x 2.39mm
Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Package Type:
DPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
11 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
480 pF @ 25 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
28 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
40 W
Series:
UniFET
Maximum Gate Source Voltage:
±30 V
Height:
2.39mm
Typical Turn-On Delay Time:
13 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1.4 Ω
RoHs Compliant
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This is Fairchild N-channel MOSFET 4 A 500 V UniFET 3-Pin DPAK manufactured by Fairchild Semiconductor. The manufacturer part number is FDD5N50TM_WS. The given dimensions of the product include 6.73 x 6.22 x 2.39mm. While 4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 500 v drain source voltage. The package is a sort of dpak. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 11 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 480 pf @ 25 v . Its accurate length is 6.73mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 28 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 40 w maximum power dissipation. The product unifet, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 2.39mm. In addition, it has a typical 13 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 1.4 ω maximum drain source resistance.

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FDD5N50, N-Channel UniFET MOSFET 500V, 4A, 1.4 Ohm(Technical Reference)

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