Fairchild FDB14N30TM N-channel MOSFET, 14 A, 300 V UniFET, 3-Pin TO-263AB
Product Information
Category:
Power MOSFET
Dimensions:
10.67 x 11.33 x 4.83mm
Maximum Continuous Drain Current:
14 A
Transistor Material:
Si
Width:
11.33mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
300 V
Package Type:
TO-263AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
815 pF@ 25 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
30 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
140 W
Series:
UniFET
Maximum Gate Source Voltage:
±30 V
Height:
4.83mm
Typical Turn-On Delay Time:
20 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
290 mΩ
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
25 nC @ 10 V
Rds On (Max) @ Id, Vgs:
290mOhm @ 7A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
300 V
Vgs (Max):
±30V
Power Dissipation (Max):
140W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1060 pF @ 25 V
Mounting Type:
Surface Mount
Series:
UniFET™
Supplier Device Package:
D2PAK (TO-263)
Current - Continuous Drain (Id) @ 25°C:
14A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is Fairchild N-channel MOSFET 14 A 300 V UniFET 3-Pin TO-263AB manufactured by Fairchild Semiconductor. The manufacturer part number is FDB14N30TM. It is of power mosfet category . The given dimensions of the product include 10.67 x 11.33 x 4.83mm. While 14 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 11.33mm wide. The product offers single transistor configuration. It has a maximum of 300 v drain source voltage. The package is a sort of to-263ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 18 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 815 pf@ 25 v . Its accurate length is 10.67mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 30 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 140 w maximum power dissipation. The product unifet, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 4.83mm. In addition, it has a typical 20 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 290 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The maximum gate charge and given voltages include 25 nc @ 10 v. It has a maximum Rds On and voltage of 290mohm @ 7a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 300 v drain to source voltage. The maximum Vgs rate is ±30v. The product carries maximum power dissipation 140w (tc). The product's input capacitance at maximum includes 1060 pf @ 25 v. The product unifet™, is a highly preferred choice for users. d2pak (to-263) is the supplier device package value. The continuous current drain at 25°C is 14a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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