Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.39mm
Maximum Continuous Drain Current:
3.1 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
250 V
Package Type:
DPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10.3 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
325 pF @ -25 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
14 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
45 W
Series:
QFET
Maximum Gate Source Voltage:
±30 V
Height:
2.39mm
Typical Turn-On Delay Time:
9.5 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
2.1 Ω
