Fairchild HUF76639S3ST_F085 N-channel MOSFET, 51 A, 100 V UltraFET, 3-Pin TO-263AB
Product Information
Category:
Power MOSFET
Dimensions:
10.67 x 9.65 x 4.83mm
Maximum Continuous Drain Current:
51 A
Transistor Material:
Si
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Package Type:
TO-263AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
71 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2400 pF @ 25 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
151 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
180 W
Series:
UltraFET
Maximum Gate Source Voltage:
±16 V
Height:
4.83mm
Typical Turn-On Delay Time:
10 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
26 mΩ
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This is Fairchild N-channel MOSFET 51 A 100 V UltraFET 3-Pin TO-263AB manufactured by Fairchild Semiconductor. The manufacturer part number is HUF76639S3ST_F085. It is of power mosfet category . The given dimensions of the product include 10.67 x 9.65 x 4.83mm. While 51 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.65mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The package is a sort of to-263ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 71 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 2400 pf @ 25 v . Its accurate length is 10.67mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 151 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 180 w maximum power dissipation. The product ultrafet, is a highly preferred choice for users. It features a maximum gate source voltage of ±16 v. In addition, the height is 4.83mm. In addition, it has a typical 10 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 26 mω maximum drain source resistance.
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