Category:
Power MOSFET
Dimensions:
5 x 5.9 x 1.1mm
Maximum Continuous Drain Current:
24 A, 60 A
Transistor Material:
Si
Width:
5.9mm
Transistor Configuration:
Series
Maximum Drain Source Voltage:
30 V
Package Type:
Power 56
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17 nC @ 10 V, 24 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1205 pF@ 15 V, 1469 pF@ 15 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
20 ns, 24 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.2 W, 2.5 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±12 (Q2) V, ±20 (Q1) V
Height:
1.1mm
Typical Turn-On Delay Time:
7 (Q2) ns, 9 (Q1) ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
7.1 mΩ, 14.5 mΩ
FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
10mOhm @ 13A, 10V, 5mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs:
24nC @ 10V, 34nC @ 10V
Vgs(th) (Max) @ Id:
2.7V @ 250µA, 2.5V @ 1mA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
13A (Ta), 24A (Tc), 18A (Ta), 60A (Tc)
Configuration:
2 N-Channel (Dual) Asymmetrical
Manufacturer:
Fairchild Semiconductor
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1605pF @ 15V, 2060pF @ 15V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-PQFN (5x6)
Packaging:
Bulk
Power - Max:
1W (Ta), 2.2W (Tc), 1W (Ta), 2.5W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS3669
ECCN:
EAR99
