Category:
Power MOSFET
Dimensions:
2 x 1.25 x 1mm
Maximum Continuous Drain Current:
410 mA, 750 mA
Transistor Material:
Si
Width:
1.25mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
25 V, 30 V
Package Type:
SC-70
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.65V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.03 nC @ 4.5 V, 1.2 nC @ 4.5 V
Channel Type:
N, P
Typical Input Capacitance @ Vds:
70 pF@ 10 V, 90 pF@ 10 V
Length:
2mm
Pin Count:
6
Typical Turn-Off Delay Time:
9 ns, 35 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.36 W
Maximum Gate Source Voltage:
±12 (N-Channel) V
Height:
1mm
Typical Turn-On Delay Time:
4 (N) ns, 6 (P) ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1.1 Ω, 400 mΩ
