Dimensions:
15.87 x 4.82 x 20.82mm
Maximum Continuous Drain Current:
54 A
Transistor Material:
Si
Width:
4.82mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
126 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
5345 pF @ 100 V
Length:
15.87mm
Pin Count:
3
Typical Turn-Off Delay Time:
113 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
481 W
Series:
SuperFET II
Maximum Gate Source Voltage:
±20 V dc, ±30 V ac
Height:
20.82mm
Typical Turn-On Delay Time:
40 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
77 mΩ
