Dimensions:
10.67 x 4.83 x 11.33mm
Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
TO-263AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
102 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2710 pF @ 25 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
208 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
341 W
Series:
SuperFET
Maximum Gate Source Voltage:
±30 V
Height:
11.33mm
Typical Turn-On Delay Time:
44 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
198 mΩ
