Toshiba 2SK3176(F) N-channel MOSFET, 30 A, 200 V, 3-Pin TO-3PN
Product Information
Category:
Power MOSFET
Dimensions:
15.9 x 4.8 x 19mm
Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Width:
4.8mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Maximum Gate Threshold Voltage:
3.5V
Maximum Drain Source Resistance:
52 mΩ
Package Type:
TO-3PN
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
125 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
5400 pF@ 10 V
Length:
15.9mm
Pin Count:
3
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
150 W
Maximum Gate Source Voltage:
±20 V
Height:
19mm
Minimum Operating Temperature:
-55 °C
Checking for live stock
FAQs
Yes. You can also search 2SK3176(F) on website for other similar products.
We accept all major payment methods for all products including ET13996369. Please check your shopping cart at the time of order.
You can order Toshiba brand products with 2SK3176(F) directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Unclassified category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba 2SK3176(F) N-channel MOSFET, 30 A, 200 V, 3-Pin TO-3PN. You can also check on our website or by contacting our customer support team for further order details on Toshiba 2SK3176(F) N-channel MOSFET, 30 A, 200 V, 3-Pin TO-3PN.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13996369 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13996369.
Yes. We ship 2SK3176(F) Internationally to many countries around the world.
This is N-channel MOSFET 30 A 200 V 3-Pin TO-3PN manufactured by Toshiba. The manufacturer part number is 2SK3176(F). It is of power mosfet category . The given dimensions of the product include 15.9 x 4.8 x 19mm. While 30 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.8mm wide. The product offers single transistor configuration. It has a maximum of 200 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. It provides up to 52 mω maximum drain source resistance. The package is a sort of to-3pn. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 125 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 5400 pf@ 10 v . Its accurate length is 15.9mm. It contains 3 pins. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 150 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 19mm. Whereas, the minimum operating temperature of the product is -55 °c.
Reviews
Don’t hesitate to ask questions for better clarification.