Category:
Power MOSFET
Dimensions:
3.21 x 3.21 x 1.12mm
Maximum Continuous Drain Current:
6 A
Transistor Material:
Si
Width:
3.21mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
40 V
Package Type:
PowerPAK 1212
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
19 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
700 pF @ 20 V
Length:
3.21mm
Pin Count:
8
Forward Transconductance:
18S
Typical Turn-Off Delay Time:
20 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
17.8 W
Maximum Gate Source Voltage:
±12 V
Height:
1.12mm
Typical Turn-On Delay Time:
9 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
470 mΩ
