Category:
Power MOSFET
Dimensions:
3.1 x 1.7 x 1.1mm
Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Package Type:
1206 ChipFET
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.45V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4.5 nC @ 5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
276 pF @ -10 V
Length:
3.1mm
Pin Count:
8
Typical Turn-Off Delay Time:
22 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.8 W
Maximum Gate Source Voltage:
±8 V
Height:
1.1mm
Typical Turn-On Delay Time:
11 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
222 mΩ
