MagnaChip MDP1932TH N-channel MOSFET, 175 A, 80 V, 3-Pin TO-220
Product Information
Dimensions:
10.67 x 4.83 x 16.51mm
Maximum Continuous Drain Current:
175 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
80 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
3.4 mΩ
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
105 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
7200 pF @ 40 V
Length:
10.67mm
Pin Count:
3
Forward Transconductance:
90S
Typical Turn-Off Delay Time:
48 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
209 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
16.51mm
Typical Turn-On Delay Time:
31 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
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Yes. We ship MDP1932TH Internationally to many countries around the world.
This is N-channel MOSFET 175 A 80 V 3-Pin TO-220 manufactured by MagnaChip. The manufacturer part number is MDP1932TH. The given dimensions of the product include 10.67 x 4.83 x 16.51mm. While 175 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.83mm wide. The product offers single transistor configuration. It has a maximum of 80 v drain source voltage. The product carries 4v of maximum gate threshold voltage. It provides up to 3.4 mω maximum drain source resistance. The package is a sort of to-220. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 105 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 7200 pf @ 40 v . Its accurate length is 10.67mm. It contains 3 pins. The forward transconductance is 90s . Whereas, its typical turn-off delay time is about 48 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 209 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 16.51mm. In addition, it has a typical 31 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v .
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