Category:
Power MOSFET
Dimensions:
3.1 x 1.7 x 1.1mm
Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.2V
Package Type:
SOT-26
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5.4 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
340 pF@ 10 V
Length:
3.1mm
Pin Count:
6
Typical Turn-Off Delay Time:
60 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.25 W
Maximum Gate Source Voltage:
±8 V
Height:
1.1mm
Typical Turn-On Delay Time:
25 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
90 mΩ
