Dimensions:
6.73 x 2.39 x 6.22mm
Maximum Continuous Drain Current:
4.5 A
Transistor Material:
Si
Width:
2.39mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
DPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
13 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
543 pF @ 25 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
33.6 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
52 W
Series:
SuperFET II
Maximum Gate Source Voltage:
±20 V dc, ±30 V ac
Height:
6.22mm
Typical Turn-On Delay Time:
10.9 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
900 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
900mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±20V
Power Dissipation (Max):
52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
720 pF @ 25 V
Mounting Type:
Surface Mount
Series:
SuperFET® II
Supplier Device Package:
TO-252 (DPAK)
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
4.5A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
