Category:
Power MOSFET
Dimensions:
1.6 x 1.6 x 0.5mm
Maximum Continuous Drain Current:
8 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
12 V
Package Type:
MLP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
14 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
1740 pF @ -6 V
Length:
1.6mm
Pin Count:
6
Typical Turn-Off Delay Time:
90 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.1 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±8 V
Height:
0.5mm
Typical Turn-On Delay Time:
9.5 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
97 mΩ
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-PowerUFDFN
Gate Charge (Qg) (Max) @ Vgs:
20 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
22mOhm @ 8A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Bulk
Drain to Source Voltage (Vdss):
12 V
Vgs (Max):
±8V
Power Dissipation (Max):
2.1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
2315 pF @ 6 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
MicroFet 1.6x1.6 Thin
Current - Continuous Drain (Id) @ 25°C:
8A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
