Fairchild FDMC86102LZ N-channel MOSFET, 22 A, 100 V PowerTrench, 8-Pin Power 33

Fairchild Semiconductor

Product Information

Dimensions:
3.3 x 3.3 x 0.75mm
Maximum Continuous Drain Current:
22 A
Transistor Material:
Si
Width:
3.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Package Type:
Power 33
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
7.6 nC @ 4.5 V, 15.3 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
969 pF @ 50 V
Length:
3.3mm
Pin Count:
8
Typical Turn-Off Delay Time:
19 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
41 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±20 V
Height:
0.75mm
Typical Turn-On Delay Time:
7.1 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
40 mΩ
RoHs Compliant
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This is Fairchild N-channel MOSFET 22 A 100 V PowerTrench 8-Pin Power 33 manufactured by Fairchild Semiconductor. The manufacturer part number is FDMC86102LZ. The given dimensions of the product include 3.3 x 3.3 x 0.75mm. While 22 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.3mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The package is a sort of power 33. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 7.6 nc @ 4.5 v, 15.3 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 969 pf @ 50 v . Its accurate length is 3.3mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 19 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 41 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 0.75mm. In addition, it has a typical 7.1 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 40 mω maximum drain source resistance.

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FDMC86102LZ, 100V N-Channel Shielded Gate Power Trench MOSFET(Technical Reference)

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