Dimensions:
10.67 x 4.7 x 16.3mm
Maximum Continuous Drain Current:
35 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
94 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3680 pF @ 100 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
89 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
357 W
Series:
SuperFET II
Maximum Gate Source Voltage:
±20 (DC) V, ±30 (AC) V
Height:
16.3mm
Typical Turn-On Delay Time:
31 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
110 mΩ
