Category:
Power MOSFET
Dimensions:
10.67 x 9.65 x 4.83mm
Maximum Continuous Drain Current:
33 A
Transistor Material:
Si
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Drain Source Resistance:
99 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
100 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3508 pF @ 100 V
Length:
10.67mm
Pin Count:
3
Forward Transconductance:
11S
Typical Turn-Off Delay Time:
99 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
278 W
Series:
E Series
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
4.83mm
Typical Turn-On Delay Time:
28 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
