Category:
Power MOSFET
Dimensions:
1.7 x 1.2 x 0.6mm
Maximum Continuous Drain Current:
750 mA
Transistor Material:
Si
Width:
1.2mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Package Type:
SC-89
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4.57 nC @ 5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
308 pF @ -10 V
Length:
1.7mm
Pin Count:
6
Typical Turn-Off Delay Time:
23 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.236 W
Maximum Gate Source Voltage:
±12 V
Height:
0.6mm
Typical Turn-On Delay Time:
19 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
268 mΩ
