MagnaChip MDU1511RH N-channel MOSFET, 100 A, 30 V, 8-Pin PowerDFN56
Product Information
Dimensions:
6.1 x 5.1 x 1.1mm
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Width:
5.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.7V
Package Type:
PowerDFN56
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
51.8 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3347 pF @ 15 V
Length:
6.1mm
Pin Count:
8
Forward Transconductance:
45S
Typical Turn-Off Delay Time:
45.6 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
78.1 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.1mm
Typical Turn-On Delay Time:
11.2 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
3.5 mΩ
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Yes. We ship MDU1511RH Internationally to many countries around the world.
This is N-channel MOSFET 100 A 30 V 8-Pin PowerDFN56 manufactured by MagnaChip. The manufacturer part number is MDU1511RH. The given dimensions of the product include 6.1 x 5.1 x 1.1mm. While 100 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.1mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.7v of maximum gate threshold voltage. The package is a sort of powerdfn56. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 51.8 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 3347 pf @ 15 v . Its accurate length is 6.1mm. It contains 8 pins. The forward transconductance is 45s . Whereas, its typical turn-off delay time is about 45.6 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 78.1 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.1mm. In addition, it has a typical 11.2 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.1v . It provides up to 3.5 mω maximum drain source resistance.
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