Category:
Power MOSFET
Dimensions:
3.05 x 1.65 x 1mm
Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Width:
1.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Drain Source Resistance:
90 mΩ
Package Type:
TSOP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3 nC @ 4.5 V
Channel Type:
N
Length:
3.05mm
Pin Count:
6
Typical Turn-Off Delay Time:
20 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.86 W
Maximum Gate Source Voltage:
±12 V
Height:
1mm
Typical Turn-On Delay Time:
35 ns
Minimum Operating Temperature:
-55 °C
This is N-channel MOSFET Transistor 3 A 20 V 6-Pin TSOP manufactured by Vishay. The manufacturer part number is SI3442BDV-T1-E3. It is of power mosfet category . The given dimensions of the product include 3.05 x 1.65 x 1mm. While 3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.65mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. It provides up to 90 mω maximum drain source resistance. The package is a sort of tsop. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.6v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 3 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 3.05mm. It contains 6 pins. Whereas, its typical turn-off delay time is about 20 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 0.86 w maximum power dissipation. It features a maximum gate source voltage of ±12 v. In addition, the height is 1mm. In addition, it has a typical 35 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c.
Reviews
Don’t hesitate to ask questions for better clarification.