Category:
Power MOSFET
Dimensions:
3.05 x 1.65 x 1mm
Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Width:
1.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Drain Source Resistance:
90 mΩ
Package Type:
TSOP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3 nC @ 4.5 V
Channel Type:
N
Length:
3.05mm
Pin Count:
6
Typical Turn-Off Delay Time:
20 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.86 W
Maximum Gate Source Voltage:
±12 V
Height:
1mm
Typical Turn-On Delay Time:
35 ns
Minimum Operating Temperature:
-55 °C
