Vishay SI8406DB-T2-E1 N-channel MOSFET, 9.5 A, 25 V, 6-Pin MICRO FOOT

SI8406DB-T2-E1 Vishay  N-channel MOSFET, 9.5 A, 25 V, 6-Pin MICRO FOOT
Vishay

Product Information

Dimensions:
1.5 x 1 x 0.31mm
Maximum Continuous Drain Current:
9.5 A
Transistor Material:
Si
Width:
1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
25 V
Package Type:
MICRO FOOT
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
22 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1315 pF@ 12.5 V
Length:
1.5mm
Pin Count:
6
Typical Turn-Off Delay Time:
25 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.9 W
Maximum Gate Source Voltage:
±20 V
Height:
0.31mm
Typical Turn-On Delay Time:
15 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
12.4 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 9.5 A 25 V 6-Pin MICRO FOOT manufactured by Vishay. The manufacturer part number is SI8406DB-T2-E1. The given dimensions of the product include 1.5 x 1 x 0.31mm. While 9.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1mm wide. The product offers single transistor configuration. It has a maximum of 25 v drain source voltage. The package is a sort of micro foot. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 22 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1315 pf@ 12.5 v . Its accurate length is 1.5mm. It contains 6 pins. Whereas, its typical turn-off delay time is about 25 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.9 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 0.31mm. In addition, it has a typical 15 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 12.4 mω maximum drain source resistance.

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Si8406DB, N-Channel 20V (Drain-Source) MOSFET Data Sheet(Technical Reference)

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