Category:
Power MOSFET
Dimensions:
6.6 x 2.3 x 6.1mm
Maximum Continuous Drain Current:
10 A
Transistor Material:
Si
Width:
2.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Package Type:
IPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
8.7 nC @ 5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
400 pF@ 25 V
Length:
6.6mm
Pin Count:
3
Typical Turn-Off Delay Time:
22 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Series:
QFET
Maximum Gate Source Voltage:
±20 V
Height:
6.1mm
Typical Turn-On Delay Time:
7.5 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
180 mΩ
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Gate Charge (Qg) (Max) @ Vgs:
12 nC @ 5 V
Rds On (Max) @ Id, Vgs:
180mOhm @ 5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Power Dissipation (Max):
2.5W (Ta), 40W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
520 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
I-PAK
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
